Activation analysis and autoradiography of impurity distributions in silicon multilayer structures

Abstract

Activation analysis and autoradiography were used to investigate the concentration distribution of contaminants in poly-Si−Si₃N₄−SiO₂−Si substrate multilayer structures (SNOS) on sampling each technological product. Samples were irradiated for 36 hrs at a thermal neutron flux of 4·10¹³n·cm⁻²·sec⁻¹. The thin films of the analysed sample were removed stepwise by selective chemical etching using appropriate masking techniques. Simultaneously autoradiographs were made of the surface of parallel samples activated under the same conditions. The concentration of the technological contaminants (e.g. Na, Cu, Au) increases in the junction interface of the layers as unambiguously shown by the results obtained.