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Doping profile techniques for Si epitaxial layers

  • Physical Methods Section
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Abstract

Various methods (e.g. spreading resistance and C-V measurements, neutron activation analysis, SIMS) have been used to determine concentration distributions of antimony dopant and charge carriers in single and double epitaxial silicon layers. Comparing the results obtained by the methods, an increased dopant diffusion process could be observed in the epitaxial layer during neutron irradiation of the sample, which arose as a systematic error in the NAA method. The origin of the deviations is discussed.

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Authors and Affiliations

  1. Institut für Physik der Werkstoffbearbeitung der AdW der DDR, Seestr. 82, 1166, Berlin

    P. Gaworzewski

  2. Research Institute for Telecommunication, 114 P.O. Box 15, Budapest, (Hungary)

    L. Kalman & H. Rausch

  3. VEB Werk für Fernsehelektronik Berlin, Ostendstr. 1-5, 116, Berlin

    M. Trapp

Authors
  1. P. Gaworzewski
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  2. L. Kalman
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  3. H. Rausch
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  4. M. Trapp
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Additional information

6th Colloquium on Microwawe Communication, Budapest, 29th August-1st September 1978.

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Gaworzewski, P., Kalman, L., Rausch, H. et al. Doping profile techniques for Si epitaxial layers. J. Radioanal. Chem. 52, 93–100 (1979). https://doi.org/10.1007/BF02517703

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  • DOI: https://doi.org/10.1007/BF02517703

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