Journal of Radioanalytical Chemistry

, Volume 44, Issue 1, pp 119–127 | Cite as

Investigation of silicon dioxide films by neutron activation analysis and autoradiography

  • H. Rausch


Investigations of insulating silicon dioxide films formed on silicon epitaxial layers are reported. Activation analysis and surface autoradiography were used to determine the concentration distribution and precipitation of contaminants in the internal part of the films and on the surfaces. The aim of this work was to study the origin of the contaminants by sampling each technological product following thermal oxidation, doped oxide deposition, heating and metallizing. Under the given conditions the following detection limits of impurities could be obtained in silicon dioxide films: Na=80 ppb, Sb=100 ppb, Cu=20 ppb and Au=5 ppb.


Oxide Film Neutron Activation Analysis Concentration Distribution Basic Oxidation Silicon Dioxide Film 
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Copyright information

© Akadémiai Kiadó 1978

Authors and Affiliations

  • H. Rausch
    • 1
  1. 1.Research Institute for TelecommunicationBudapest(Hungary)

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