Journal of radioanalytical chemistry

, Volume 68, Issue 1–2, pp 135–143 | Cite as

Determination of oxygen with reactor neutrons

  • H. Yonezawa
  • T. Shigematsu
  • K. Kudo


Oxygen in silicon was determined by the secondary nuclear reactions of6Li(n, α)T and16O(t, n)18F. Lithium fluoride was deposited in vacuum on fused quartz, covered with the sample and irradiated in a nuclear reactor. The depth profiles of18F in fused quartz and in silicon were observed, and enough depth to eliminate surface oxygen was estimated. On the basis of these results, oxygen was determined by the average cross-section method. Oxygen concentration in CZ silicon with various growing condition was 5–26 ppm and was consistent with those determined by the infrared absorption method. The detection limit of oxygen in silicon is 5 ppm.


Silicon Dioxide Layer Fuse Quartz Silicon Sample Reactor Neutron Lithium Fluoride 
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  1. 1.
    E. RICCI, R. L. HAHN, Anal. Chem., 37 (1965) 742.CrossRefGoogle Scholar
  2. 2.
    E. A. SCHWEIKERT, H. L. ROOK, Anal. Chem., 42 (1970) 1525.CrossRefGoogle Scholar
  3. 3.
    T. NOZAKI, Y. YATSURUGI, N. AKIYAMA, Y. ENDO, Y. MAKIDE, J. Radioanal. Chem., 19 (1977) 109.CrossRefGoogle Scholar
  4. 4.
    V. K. LORENZEN, D. KÖNIG, Z. Naturforschg., 16 (1961) 933.Google Scholar
  5. 5.
    W. LEONHARDT, Kernenergie, 5 (1962) 166.Google Scholar
  6. 6.
    W. LEONHARDT, Anal. Chim. Acta, 32 (1965) 355.CrossRefGoogle Scholar
  7. 7.
    M. VALLADON, L. DEBRUN, J. Radioanal. Chem., 39 (1977) 385.CrossRefGoogle Scholar
  8. 8.
    Thermal and epithermal neutron flux was calculated by modification of the triple comparator method; F. De CORTE, A. SPEECKE, J. HOSTE, J. Radioanal. Chem., 3 (1969) 205.CrossRefGoogle Scholar
  9. 9.
    C. F. WILLIAMSON, J. BOUJOT, J. PICARD, CEA—R 3042, 1966.Google Scholar
  10. 10.
    K. HOSHIKAWA, H. HIRATA, K. IKUTA, Semiconductor Silicon 1981, H. R. HUFF, K. TAKEISHI, R. J. KRIEGLER (Eds), Electrochem. Soc. Pennigton, 1981, p. 101.Google Scholar

Copyright information

© Akadémiai Kiadó 1982

Authors and Affiliations

  • H. Yonezawa
    • 1
  • T. Shigematsu
    • 1
  • K. Kudo
    • 1
  1. 1.Ibaraki Electrical Communication LaboratoryNippon Telegraph and Telephone Public CorporationTokai, IbarakiJapan

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