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Determination of oxygen in metals and semiconductors by means of the16O(T, n)18F reaction

  • Comparisons with Other Analytical Methods
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Abstract

Tritons accelerated up to 3.5 MeV by a Van de Graaff, were used to study the16O(T, n)18F reaction, which was then applied to the analysis of oxygen in metals and semiconductors. The calculated sensitivity for the determination of oxygen is 0.5 ppb at 3.5 MeV. Si, Ti and Mo were analyzed non-destructively at 3.5 MeV and the results agreed with results obtained by other methods. Pure Ge and AsGa were analyzed non-destructively at 3 MeV and the detection limits were respectively 25 and 6 ppb.

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Authors and Affiliations

  1. Groupe d'Applications des Reactions Nucleaires à l'Analyse Chimique, Service du Cyclotron, Centre National de la Recherche Scientifique, 45045, Orleans-Cedex, (France)

    M. Valladon & J. L. Debrun

Authors
  1. M. Valladon
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  2. J. L. Debrun
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Valladon, M., Debrun, J.L. Determination of oxygen in metals and semiconductors by means of the16O(T, n)18F reaction. J. Radioanal. Chem. 39, 385–395 (1977). https://doi.org/10.1007/BF02517244

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  • DOI: https://doi.org/10.1007/BF02517244

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