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On the application of charged particle activation analysis to the trace characterization of semiconductor materials

  • Dosage de Quelques Eléments dans les Matériaux Semi-conducteurs
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Résumé

On décrit l'application de l'analyse par activation aux particules chargées (AAPC) avec mesure après irradiation à la détection de traces d'oxygène, de bore et de lithium. On utilise l'activation aux protens, aux alpha et aux3He pour le dosage non-destructif de l'oxygene dans le silicium. Les limites de détection expérimentale sont respectivement de 0,06 ppm, 0,05 ppm et 5 ppb. L'activation aux3He, couplée à une séparation radiochimique après irradiation, a été employée pour les analyses de l'oxygène dans le germanium avec une limite de détection de 10 ppb. De nouvelles techniques ont été développées pour le dosage du bore et du lithium, basées sur la mesure du8Li (T: 850 msec) et de12B (T: 20 msec), respectivement et utilisant une technique de mesure β en coïncidence avec deux scintillateurs minces de plastique. Les possibilités de cette méthode presque “prompte” sont illustrées avec des résultats concernant le silicium, le germanium et des échantillons de verre.

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Authors and Affiliations

  1. Activation Analysis Research Laboratory and Chemistry Department, Texas A and M University, 77843, College Station, Texas, (USA)

    E. A. Schweikert, J. R. McGinley, G. Francis & D. L. Swindle

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  1. E. A. Schweikert
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  2. J. R. McGinley
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  3. G. Francis
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  4. D. L. Swindle
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Schweikert, E.A., McGinley, J.R., Francis, G. et al. On the application of charged particle activation analysis to the trace characterization of semiconductor materials. J. Radioanal. Chem. 19, 89–108 (1974). https://doi.org/10.1007/BF02515270

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