Abstract
On discute des exigences analytiques pour la technologie de fabrication et des résultats de l'analyse dans la masse, à la surface et dans des couches superficielles de silicium et d'arséniure de gallium semi-conducteurs.
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Szabó, E. Activation analytical methods for the grading of semiconductor crystals. J. Radioanal. Chem. 19, 23–32 (1974). https://doi.org/10.1007/BF02515264
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DOI: https://doi.org/10.1007/BF02515264