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Activation analytical methods for the grading of semiconductor crystals

  • Analyse systématique de matériaux semi-conducteurs irradiations neutroniques
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Abstract

On discute des exigences analytiques pour la technologie de fabrication et des résultats de l'analyse dans la masse, à la surface et dans des couches superficielles de silicium et d'arséniure de gallium semi-conducteurs.

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Author notes

  1. E. Szabó

    Present address: International Atomic Energy Agency Kärtner Ring 11, P.O. Box 590 A-1011, Vienna, Austria

Authors and Affiliations

  1. Central Research Institute for Physics, Budapest, (Hungary)

    E. Szabó

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  1. E. Szabó
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Szabó, E. Activation analytical methods for the grading of semiconductor crystals. J. Radioanal. Chem. 19, 23–32 (1974). https://doi.org/10.1007/BF02515264

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  • DOI: https://doi.org/10.1007/BF02515264

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