Abstract
The effect of interface recombination of charge carriers on photoconductivity of variable-band structures with extrinsic conductivity type and a linear coordinate dependence of the forbidden band width has been studied theoretically. It has been shown that under conditions of strong light absorption the interface recombination of charge carriers leads to the formation of a minimum, in the photoconduction spectrum for a photon energy equal to the forbidden band width at the interface. The details of the spectral dependence of the photoconductivity of a variable-band structure in the neighborhood of the photoconductivity minimum are analyzed.
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Institute of Applied Physics, Iv. Franko L’vov State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 94–98, July, 1997.
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Savitskii, V.G., Sokolovskii, B.S. Effect of interface recombination of charge carriers on the photoconductivity of variable-band structures. Russ Phys J 40, 679–682 (1997). https://doi.org/10.1007/BF02514960
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DOI: https://doi.org/10.1007/BF02514960