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Measuring the electrical conductivity and the hall coefficient for semiconductor structures inhomogeneous with depth

  • Physics of Semiconductors and Dielectrics
  • Published:
Russian Physics Journal Aims and scope

Abstract

The well-known four-point probe method of combined measurements of electrical conductivity and the Hall coefficient of semiconductor layers is developed further in the present work. Formulas are derived that allow the electrical conductivity and the Hall coefficient to be averaged over layers inhomogeneous with depth. Analytical expressions for calculating correction factors for this measurement method are obtained, and practical recommendations for their calculation on a computer are also given.

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Authors
  1. N. N. Polyakov
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  2. V. E. Oleinikov
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Additional information

Lipetsk State Pedagogical Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 46–51, January, 2000.

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Polyakov, N.N., Oleinikov, V.E. Measuring the electrical conductivity and the hall coefficient for semiconductor structures inhomogeneous with depth. Russ Phys J 43, 40–45 (2000). https://doi.org/10.1007/BF02513007

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  • DOI: https://doi.org/10.1007/BF02513007

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