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Measurement Techniques

, Volume 41, Issue 1, pp 71–77 | Cite as

Parameters of epitaxial light-emitting diode structures and the features of their charge center distribution

  • F. I. Manyakhin
Radio Engineering Measurements
  • 12 Downloads

Abstract

The presence of compensated regions at the boundary of the p—n junction is established by measuring the distribution of the effective charge-center density in the space-charge region of semiconducting structures. The effect of these regions on the parameters of the capacitance-voltage characteristics and the features of the technological structure of light-emitting diodes are described.

Keywords

Bias Voltage Active Layer Epitaxial Layer Gallium Nitride Contact Potential 
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Copyright information

© Plenum Publishing Corporation 1998

Authors and Affiliations

  • F. I. Manyakhin

There are no affiliations available

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