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Absorption of dislocation phonons by excitons and impurity atoms at low temperatures

  • Physics of Semiconductors and Dielectrics
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Russian Physics Journal Aims and scope

Abstract

A deceleration mechanism of dislocations moving in crystals is studied in this work. It is shown that at low temperatures the main contribution to the dislocation deceleration comes from dislocation interaction with Wannier-Mott excitons and impurity atoms. The calculations are done on the example of a screw dislocation. The dependence of the power losses on the dislocation velocity is studied.

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Additional information

Saratov State Technical University. Translated from Izvestiya Vysshikh Uchebhykh Zavedenii, Fizika, No. 11, pp. 7–10, November, 1999.

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Gestrin, S.G., Sal'nikov, A.N. & Samorodina, T.V. Absorption of dislocation phonons by excitons and impurity atoms at low temperatures. Russ Phys J 42, 927–930 (1999). https://doi.org/10.1007/BF02509683

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  • DOI: https://doi.org/10.1007/BF02509683

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