Abstract
The parameters of defects of radiation-induced and biographic types and of their complexes in boron nitride andAl 2O3 mono- and polycrystals after ion and thermal modification are investigated invoking the methods of optical and thermoactivation spectroscopy. The influence of electron transitions involving defect energy levels on changes in the electrophysical and optical properties of modified dielectrics is recognized. The contribution of the forbidden band width and of the material structure to changes in the properties of defect clusters with continuous spectra of energy levels and of separate radiation-induced point-type defects with local energy levels is evaluated. The stability of defects with various energy spectra under thermal, field, and photoexcitation and also after heat treatment in air is evaluated. The most probable nature of vacancy and impurity-vacancy defects and of vacancy complexes is understood.
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References
V. V. Lopatin, A. V. Kabyshev, and L. S. Bushnev, Phys. Status Solidi,A116, No. 1, K69–72 (1989).
M. L. Dalal, M. Rahmani, and P. D. Townsend, Nucl. Instrum. Meth. Phys. Res.,B32, 61–65 (1988).
A. V. Kabyshev, F. V. Konysov, and V. V. Lopatin, Fiz. Tverd. Tela,37, No. 7, 1981–1989 (1995).
A. V. Kabyshev, F. V. Konusov, and V. V. Lopatin, Poverkhnost', No. 12, 33–37 (1995).
P. D. Townsend, Rep. Prog. Phys.,50, 501–558 (1987).
A. V. Kabyshev, F. V. Konusov, and V. V. Lopatin, Poverkhnost', No. 8, 34–44 (1996).
Yu. M. Annenkov, T. S. Frangul'yan, V. F. Pichugin, and V. A. Tishkina, Fiz. Khim. Opt. Mater., No. 6, 9–13 (1994).
A. V. Kabyshev and V. V. Lopatin, Poverkhnost', No. 7, 86–92 (1994).
A. V. Kabyshev and F. V. Konusov, Fiz. Khim. Opt. Mater., No. 6, 21–26 (1997).
I. A. Tale, Izv. Akad. Nauk SSSR, Ser. Fiz.,34, 245–250 (1981).
A. V. Kabyshev, F. V. Konusov, and V. V. Lopatin, in: Proc. Ninth International Meeting on Radiation Physics of Solids [in Russian], Izdatel'stvo NII PMT at MGIÉM, Moscow (1999), pp. 307–314.
F. F. Vol'kenshtein, Electron Processes on the Semiconductor Surface during Chemisorption [in Russian], Nauka, Moscow (1987).
A. W. Moore and L. S. Singer, J. Phys. Chem. Solids,33, 343–346 (1972).
B. D. Evans and M. Stapelbrock, Phys. Rev.,B18, No. 12, 7089–7098 (1978).
I. I. Mil'man, V. S. Kortov, and V. I. Kirpa, Fiz. Tverd. Tela,37, No. 4, 1149–1159 (1995).
V. S. Kortov and I. I. Mil'man, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 11, 145–161 (1996).
A. Katsir, J. T. Suss, A. Zunger, and A. Halperin, Phys. Rev. B,11, No. 6, 2370–2377 (1975).
V. A. Krasnoperov, N. V. Vekshina, M. B. Khusidman, and V. S. Neshpor, Zh. Prikl. Spektrosk.,11, No. 2, 299–302 (1969).
F. V. Konusov and V. V. Lopatin, J. Phys. Chem. Solids,53, No. 6, 847–854 (1992).
B. D. Jeffries, J. D. Brewer, and G. P. Summers, Phys. Rev.,B24, No. 10, 6074–6082 (1981).
I. Kh. Abdukadyrova, At. Énerg.,62, No. 3, 180–186 (1987).
L. S. Welsh, A. E. Hughes, and G. P. Pells, J. Phys.,C13, 1805–1816 (1980).
S. A. Mikhnov and V. I. Uskov, Zh. Prikl. Spektrosk.,42, No. 6, 940–944 (1985).
T. Maruyama and Y. Matsuda, J. Phys. Soc. Jpn.,19, No. 7, 1096–1104 (1964).
B. D. Evans and M. Stapelbrock, Solid State Commun.,33, No. 7, 765–770 (1980).
K. H. Lee and J. H. Crawford, Phys. Rev.,B15, No. 8, 4065–4070 (1977).
A. I. Syurdo, V. S. Kortov, and I. I. Mil'man, Opt. Spektrosk.,64, No. 6, 1363–1366 (1988).
A. V. Kabyshev, V. M. Kezkalo, V. V. Lopatin,et al., Phys. Status Solidi,A126, K19–23 (1991).
A. V. Kabyshev, V. M. Ketskalo, Yu. P. Surov,et al., Poroshk. Metall., No. 8, 27–31 (1992).
A. V. Kabyshev, F. V. Konusov, and V. V. Lopatin, in: Proc. Eighth International Meeting on Radiation Physics of a Solid [in Russian], Izdatel'stvo NII PMT at MGIÉM, Moscow (1998), pp. 143–147.
R. A. Évarestov, E. A. Kotomin, and A. I. Ermoshkin, Models of Point Defects in Wide-Gap Solids [in Russian], Zinatne, Riga (1983).
R. H. Bartram, C. E. Swenberg, and J. T. Fournier, Phys. Rev.,199, A941–951 (1965).
I. S. Radchenko, Fiz. Tverd. Tela,12, No. 11, 3261–3264 (1970).
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Scientific-Research Institute of High Voltages at Tomsk Polytechnic University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 85–94, March, 2000.
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Kabyshev, A.V., Konusov, F.V. & Lopatin, V.V. Radiation-induced defects and their complexes in ion-irradiated thermostable dielectrics. Russ Phys J 43, 241–249 (2000). https://doi.org/10.1007/BF02509613
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DOI: https://doi.org/10.1007/BF02509613