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Relaxation, self-trapping, and decay of electron excitations in wide-gap oxides

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Abstract

Emission spectra ofMgO, Al 2O3, Y2O3, andSc 2O3 crystals, excited at 8 K by photons with energies 5–40 eV, are measured. The luminescence of free excitons andGe 2+ centers forMgO, the self-trapped exciton emission (STEE) forAl 2O3 andY 2O3, and the tunnel self-luminescence forScO 3 are studied. A distinction between hole polarons in oxides and self-trapped holes in halides leads to a sharp difference in the mechanisms of STEE creation on electronhole recombination for these two classes of solids. The electron-hole, hole-electron, and exciton mechanisms of excitation multiplication are identified. The high radioresistance of wide-gap oxides and the behavior of oxygen interstitials inMgO crystals are discussed.

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Authors
  1. Ch. Lushchik
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  2. A. Lushchik
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  3. T. Kyarner
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  4. M. Kirm
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  5. S. Dolgov
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Additional information

Institute of Physics of Estonia. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 5–16, March, 2000.

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Lushchik, C., Lushchik, A., Kyarner, T. et al. Relaxation, self-trapping, and decay of electron excitations in wide-gap oxides. Russ Phys J 43, 171–180 (2000). https://doi.org/10.1007/BF02509605

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