Semiconductor laser with a biconical waveguide
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The propagation losses in the fundamental mode of a bicone made of highly reflecting metal or a dielectric of large refraction were approximately estimated using Leontovich's boundary condition. A 400-fold concentration of the energy flux density has been obtained in a cross section which is much smaller than λ. Here, the losses are 2.5% at λ=550 nm in an Ag bicone and 12% in a semiconductor bicone with a band gap of ≈1 eV forhv larger than the band gap. The excitation efficiency of a bicone has been estimated. While not too large, it can be increased significantly using the method proposed in the present paper. The application of the optical bicone for the multiplication of a semiconductor-laser frequency is discussed. The results obtained are also of use in scanning near-field optical microscopy and in experiments on focusing laser pulses of ultrahigh power.
KeywordsSemiconductor Laser Russian Laser Research Large Refraction Russian Laser Research Volume Excitation Efficiency
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