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Defect formation kinetics in alkali halides in very strong electric fields

  • Physics of Semiconductors and Dielectrics
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Abstract

Experimental investigations of defect formation in alkali halide crystals have been carried out over a broad range of electric fields from 104 to 107 V/cm with different field pulse widths. It is shown that not only the electric field strength but the length of time it is applied is important. The effect of defect formation processes on the shapes of the current-voltage and voltage-brightness characteristics of the samples was studied in the indicated field range. The defect formation mechanism in alkali halide crystals in very strong electric fields has been better defined.

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Authors
  1. S. G. Ekhanin
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  2. N. S. Nesmelov
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  3. L. Yu. Soldatova
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Additional information

Tomsk State University Academy of Control Systems and Radio Electronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 3–6, April, 1997.

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Ekhanin, S.G., Nesmelov, N.S. & Soldatova, L.Y. Defect formation kinetics in alkali halides in very strong electric fields. Russ Phys J 40, 311–313 (1997). https://doi.org/10.1007/BF02508849

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  • DOI: https://doi.org/10.1007/BF02508849

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