Abstract
The results are presented of the experimental detection and investigation of the phenomenon of the drift of excitons in an inhomogeneous electric field. The investigations were performed on silicon structures with Shottky barriers at 4.2 K. A study was made of the influence of the photoexcitation intensity and electric field strength on the breakdown dynamics of the structure. The experimental results were used to show that breakdown of a reverse-biased Shottky barrier involves a narrowing of the width of the space-charge region due to a drift of excitons in the inhomogeneous electric field and to recombination of electrons on ionized impurity centers of the barrier.
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Kh. I. Amirkhanov Physics Institute, Dagestan Scientific Center, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 67–69, May, 1997.
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Musaev, A.M. Drift of excitons in an inhomogeneous electric field in silicon at 4.2K. Russ Phys J 40, 462–464 (1997). https://doi.org/10.1007/BF02508776
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DOI: https://doi.org/10.1007/BF02508776