Russian Physics Journal

, Volume 40, Issue 5, pp 457–461 | Cite as

Investigation of the kinetic characteristics of heavily doped compensated CdSnAs2(Cu)

  • M. I. Daunov
  • V. I. Danilov
  • A. B. Magomedov
Physics of Semiconductors and Insulators
  • 13 Downloads

Abstract

The concentrational dependences of the Hall coefficient and of the resistivity were used to investigate the interaction of diffusively introduced copper impurity with an ensemble of intrinsic defects inn-CdSnAs 2. The initial electron density and the concentrations of theV As andCu As defects were found to be of the same order. A study was made of the dependence of the electrophysical properties ofCdSnAs 2 (Cu) on the population of the impurity band and it was shown that the features of the kinetic characteristics ofCdSnAs 2 (Cu) are determined by the absence of an energy gap between the bands with a conductivity of opposite sign and by the fact that one of the bands is an impurity band.

Keywords

Conduction Band Kinetic Characteristic Hall Coefficient Charge Carrier Mobility Electrophysical Property 

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Copyright information

© Plenum Publishing Corporation 1997

Authors and Affiliations

  • M. I. Daunov
  • V. I. Danilov
  • A. B. Magomedov

There are no affiliations available

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