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Resonant electron tunneling in (111) GaAs/AlAs structures

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Abstract

Pseudopotential and scattering matrix methods are used to study the spectral details of the transmission of electrons as a function of the angle of incidence on a heterojunction in various structures based on (111) GaAs/AlAs. A simplified two-valley (Γ-L) model for describing the electronic states in such structures has been proposed and its parameters have been determined. The existence of quasilocalized “interfacial” states has been established. A formula has been found which well approximates the behavior of the scattering matrix elements near these resonances, and their decay times are estimated.

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Authors
  1. G. F. Karavaev
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  2. S. N. Grinyaev
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Additional information

Academician V. D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika No. 9, pp. 89–99, September, 1998.

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Karavaev, G.F., Grinyaev, S.N. Resonant electron tunneling in (111) GaAs/AlAs structures. Russ Phys J 41, 943–953 (1998). https://doi.org/10.1007/BF02508727

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  • DOI: https://doi.org/10.1007/BF02508727

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