Abstract
We study epitaxial GaAs and InGaAs films produced by molecular-beam epitaxy in the temperature range 150–480°C and with various arsenic partial pressures. We determine the structural and electrophysical characteristics of the film (the excess arsenic, the crystal lattice parameter, and the carrier concentration and mobility) as a function of the growth conditions. The influence of annealing on the cluster-structure formation in low-temperature MBE films, and on their properties, is also studied. In low-temperature GaAs we find a characteristic microwave absorption signal indicating the presence of a superconducting phase. We discuss the possible nature of this phase with regard to clusters of gallium or an In-Ga alloy.
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Additional information
Siberian V. D. Kuznetsova Physicotechnical Institute, Tomsk State University. Tomsk State University. Semiconductor Physics Institute, Siberian Division, Russian Academy of Sciences. A. F. Ioffe Physicotechnical Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika No. 9, pp. 37–45, September, 1998.
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Bobrovnikova, I.A., Veinger, A.I., Vilisova, M.D. et al. Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy. Russ Phys J 41, 885–893 (1998). https://doi.org/10.1007/BF02508721
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DOI: https://doi.org/10.1007/BF02508721