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Investigation of Si<B, S≥and Si<B, Rh≥compensated photoresistors

  • Physics of Semiconductors and Dielectrics
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Russian Physics Journal Aims and scope

Abstract

The influence of the electric parameters of compensating sulfur and rhodium impurities on the photosensitivity of p-type silicon is discussed in the present paper. Conditions of the increased photosensitivity ofSi<B, S> andSi<B, Rh> in the near-IR region of the spectrum are defined. The increase of the photosensitivity of compensated silicon at 300 K is found to be due to a higher degree of microinhomogeneity in the resistivity (with a simultaneous increase in the degree of compensation) irrespective of the electric parameters of the compensating impurity in silicon.

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Authors
  1. M. Karimov
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  2. A. K. Karakhodzhaev
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Additional information

Tashkent State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 77–80, June, 2000.

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Karimov, M., Karakhodzhaev, A.K. Investigation of Si<B, S≥and Si<B, Rh≥compensated photoresistors. Russ Phys J 43, 509–511 (2000). https://doi.org/10.1007/BF02508633

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  • DOI: https://doi.org/10.1007/BF02508633

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