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Estimation of the effect, of photodetector sensitivity quenching under intense illumination

  • Physics of Semiconductors and Dielectrics
  • Published:
Russian Physics Journal Aims and scope

Abstract

Based on estimation of the depletion of excitation centers in semiconductor photodetectors, the opportunity of saturation of their sensitivity under intense illumination is demonstrated. Formulas are derived that allow the parameters of intense illumination causing the complete quenching of photodetector sensitivity to be quantitatively estimated. The experiments on the illumination ofPbS photoresistors by laser radiation confirm the theoretical estimates.

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Authors
  1. Ya. A. Sukhanov
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Additional information

Peter the Great Military Academy of Rocket Strategic Forces. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 91–96, April, 2000.

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Sukhanov, Y.A. Estimation of the effect, of photodetector sensitivity quenching under intense illumination. Russ Phys J 43, 338–343 (2000). https://doi.org/10.1007/BF02508369

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  • DOI: https://doi.org/10.1007/BF02508369

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