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Russian Physics Journal

, Volume 42, Issue 3, pp 278–281 | Cite as

Distribution of electric field in GaAs diffused structures doped by iron or chromium

  • A. I. Gossen
Article
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Abstract

An analysis based on numerical calculations has been done for the distribution of an electric field in GaAs diffused by chromium or iron-doped structures. First, a calculation has been carried out for the non-uniform impurity distribution using experimentally measured Fe and Cr profiles. It is shown that a ν-n-junction is formed in chromium-doped structures, and a π-n-junction is formed in iron-doped ones. A conclusion is made that these junctions are graded.

Keywords

GaAs Barrier Height Reverse Bias Space Charge Region Deep Center 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic/Plenum Publishers 1999

Authors and Affiliations

  • A. I. Gossen

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