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Russian Physics Journal

, Volume 42, Issue 6, pp 533–537 | Cite as

Surface photocapacitor effect in structures with photoconductive films

  • A. G. Rokakh
  • S. V. Stetsyura
Physics of Semiconductors and Dielectrics

Abstract

A specific type of the photocapacitor effect (the surface photocapacitor effect or the S-PCE) has been studied in the present paper. Its physical and mathematical models are constructed. Computer modeling has been performed to study the influence of the photosensitive layer characteristics on the surface-sensitive photocapacitor (SSPC) characteristics to optimize its parameters. The feasibility of the SSPC application for developing sensors of various types and studying the processes proceeding in films has been demonstrated. The S-PCE characteristics are experimentally investigated. It is shown that the S-PCE contribution to the total PCE may be significant especially for structures with discontinuous electrodes.

Keywords

Equivalent Circuit Contact Resistance Nonequilibrium Carrier Plane Capacitor Surface Recombination Rate 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic/Plenum Publishers 1999

Authors and Affiliations

  • A. G. Rokakh
  • S. V. Stetsyura

There are no affiliations available

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