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Charge instability in mis structures with dielectric silicon dioxide-phosphoro-silicate glass layers under conditions of high-field tunnel injection

  • Physics of Semiconductors and Dielectrics
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Russian Physics Journal Aims and scope

Abstract

The processes of charge degradation in MIS structures with dielectric silicon dioxide-phosphoro-silicate glass (PSG) layers are investigated for high-field tunnel electron injection from silicon. A model for their description is proposed. It is shown that in a PSG film the interband shock ionization intensity significantly decreases compared toSiO 2. This phenomenon is quantitatively described within the framework of the model examined. It has been found that in structures with polysilicon gate doped with phosphorus the PSG film can be formed at the gatesemiconductor interface, which results in the formation of electronic traps in the dielectric and in a decreased thickness of theSiO 2 layer in which the interband shock ionization proceeds.

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Authors
  1. G. G. Bondarenko
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  2. V. V. Andreev
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  3. V. G. Baryshev
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  4. A. A. Stolyarov
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Additional information

Kaluga Affiliate of the Bauman Moscow State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 59–63, May, 1999.

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Bondarenko, G.G., Andreev, V.V., Baryshev, V.G. et al. Charge instability in mis structures with dielectric silicon dioxide-phosphoro-silicate glass layers under conditions of high-field tunnel injection. Russ Phys J 42, 485–489 (1999). https://doi.org/10.1007/BF02508221

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  • DOI: https://doi.org/10.1007/BF02508221

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