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Russian Physics Journal

, Volume 42, Issue 5, pp 485–489 | Cite as

Charge instability in mis structures with dielectric silicon dioxide-phosphoro-silicate glass layers under conditions of high-field tunnel injection

  • G. G. Bondarenko
  • V. V. Andreev
  • V. G. Baryshev
  • A. A. Stolyarov
Physics of Semiconductors and Dielectrics

Abstract

The processes of charge degradation in MIS structures with dielectric silicon dioxide-phosphoro-silicate glass (PSG) layers are investigated for high-field tunnel electron injection from silicon. A model for their description is proposed. It is shown that in a PSG film the interband shock ionization intensity significantly decreases compared toSiO 2. This phenomenon is quantitatively described within the framework of the model examined. It has been found that in structures with polysilicon gate doped with phosphorus the PSG film can be formed at the gatesemiconductor interface, which results in the formation of electronic traps in the dielectric and in a decreased thickness of theSiO 2 layer in which the interband shock ionization proceeds.

Keywords

Polysilicon Capture Cross Section SiO2 Film Hole Generation Polysilicon Gate 
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Copyright information

© Kluwer Academic/Plenum Publishers 1999

Authors and Affiliations

  • G. G. Bondarenko
  • V. V. Andreev
  • V. G. Baryshev
  • A. A. Stolyarov

There are no affiliations available

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