Abstract
Methods are surveyed for measuring the critical dimensions of VLSI components. The General Physics Institute of the Russian Academy of Sciences has developed a method that meets the requirements for metrological support up to the year 2010 as set out in the National Technology Roadmap for Semiconductors of the USA.
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Additional information
Translated from Izmeritel'naya Tekhnika, No. 1, pp. 14–18, January, 1999.
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Novikov, Y.A., Rakov, A.V. Metrology of vlsi critical element sizes. Meas Tech 42, 20–26 (1999). https://doi.org/10.1007/BF02504195
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DOI: https://doi.org/10.1007/BF02504195