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Determination of the parameters of deep levels in semiconductors using nonstationary spectroscopy and low-frequency noise spectroscopy

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Abstract

A development of the activation-drift model is obtained. This enables the procedure for determining the parameters of deep levels in semiconductors using the data of nonstationary spectroscopy and low-frequency noise spectroscopy to be made more accurate and increases the reproducibility and reliability of the results of measurements.

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  1. T. A. Kholomina
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Additional information

Translated from Izmeritel'naya Tekhnika, No. 12, pp. 44–46, December, 1998.

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Kholomina, T.A. Determination of the parameters of deep levels in semiconductors using nonstationary spectroscopy and low-frequency noise spectroscopy. Meas Tech 41, 1157–1161 (1998). https://doi.org/10.1007/BF02503838

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