Abstract
The kinetics of photoelectrochemical hydrogen evolution at p-Si single crystals in acidic aqueous solutions of electrolytes under pulse photoexcitation was studied. Despite a low stability of the silicon surface under the experimental conditions, a distinct interrelation between the characteristic time of interfacial charge transfer and stationary current was found. The determination of the characteristic transfer time does not need the detailed elaboration of generation-recombination processes in the semiconductor. The steady-state current density was shown to be determined both for the dark current and photocurrent by the surface charge density.
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Published inIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 10, pp. 1724–1728, October, 2000.
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Babenko, S.D., Balakai, A.A., Lavrushko, A.G. et al. Kinetic analysis of photoelectrochemical hydrogen evolution over p-type silicon in acidic aqueous solutions of electrolytes. Russ Chem Bull 49, 1707–1711 (2000). https://doi.org/10.1007/BF02496338
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DOI: https://doi.org/10.1007/BF02496338