Abstract
Electronic structure of superstoichiometric silicon carbide, ß-SiC x>1.0, was studied by the self-consistentab initio linearized “muffin-tin” orbital method. It is most likely that the formation of ß-SiC x>1.0 occurs by replacement of silicon atoms by carbon atoms rather than by insertion of carbon atoms into interstitial lattice sites. The C→Si replacement is accompanied by lattice compression (the equilibrium lattice parameter for a superstoichiometric phase of composition Si0.75C1.25 is −2% smaller than for SiC). In the presence of superstoichiometric carbon the type of interaction between silicon and carbon atoms changes and additional bonds characteristic of diamond are formed.
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Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 3, pp. 618–621, March, 1999.
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Ivanovskii, A.L., Medvedeva, N.I. & Shveikin, G.P. Electronic structure of silicon carbide containing superstoichiometric carbon. Russ Chem Bull 48, 612–615 (1999). https://doi.org/10.1007/BF02496192
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DOI: https://doi.org/10.1007/BF02496192