Abstract
The chemical dynamics of≡SiOC.O radicals grafted on the silica surface was studied in the 77–290 K temperature interval. The rotation diffusion coefficients and characteristic times of rotational mobility of the radicals were estimated.
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Published inIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 11, pp. 1862–1865, November, 2000.
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Pergushov, V.I. Chemical dynamics of ≡SiOC.O radicals grafted on the activated silica surface. Russ Chem Bull 49, 1834–1837 (2000). https://doi.org/10.1007/BF02494919
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DOI: https://doi.org/10.1007/BF02494919