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Substituent effects in radical cations of linear oligosilanes

  • Physical Chemistry
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Russian Chemical Bulletin Aims and scope

Abstract

The dependence was analyzed of the first ionization potentialI(Si−Si) corresponding to detachment of an electron from the σ(Si−Si) highest occupied molecular orbital on the parameters of organic (X=Me, Et, But, Ph, CH=CH2), inorganic (X=F, Cl, Br), and organosilicon (X=SiR3; R is organic radical) substituents in di-, tri-, and tetrasilanes X3SiSiX3. It was found by correlation analysis that out of the three possible effects of substituents X (the inductive, polarizability, and resonance effects), only the first two of them affect theI(Si−Si) values. This means that no conjugation between the substituent X and the radical cation center occurs in X3Xi±SiX3.

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Authors and Affiliations

  1. G. A. Razuvaev Institute of Organometallic Chemistry, Russian Academy of Sciences, 49 ul. Tropinina, 603600, Nizhnii Novgorod, Russian Federation

    A. N. Egorochkin, S. E. Skobeleva, T. G. Mushtina & O. V. Zderenova

  2. Irkutsk Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, 1 ul. Favorskogo, 664033, Irkutsk, Russian Federation

    M. G. Voronkov

Authors
  1. A. N. Egorochkin
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  2. M. G. Voronkov
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  3. S. E. Skobeleva
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  4. T. G. Mushtina
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  5. O. V. Zderenova
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Additional information

Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 2, pp. 253–257, February, 2000.

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Egorochkin, A.N., Voronkov, M.G., Skobeleva, S.E. et al. Substituent effects in radical cations of linear oligosilanes. Russ Chem Bull 49, 256–260 (2000). https://doi.org/10.1007/BF02494667

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  • DOI: https://doi.org/10.1007/BF02494667

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