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Influence of external magnetic field on the flow field in molten semiconductor of Czochralski crystal growth —A numerical simulation

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Abstract

Numerical results show that an external magnetic field may influence significantly the flow pattern in the molten semiconductor of Czochralski crystal growth. The melt flow could be pronouncedly damped by a magnetic field with the intensity of several thousands Gauss, while the temperature field is affected only in a less extent by the magnetic field.

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The project is supported by the National Natural Foundation of China.

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Xi, C., Minglun, X. Influence of external magnetic field on the flow field in molten semiconductor of Czochralski crystal growth —A numerical simulation. Acta Mech Sinica 6, 81–84 (1990). https://doi.org/10.1007/BF02488462

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  • DOI: https://doi.org/10.1007/BF02488462

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