Conclusions
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1.
Based on a thermodynamic analysis we determined the conditions of the process of reduction of silicon dioxide by silicon carbide that yields metallurgical silicon of enhanced quality, namely,T=2450–2600 K,X=1.4–1.6, andp=0.1 MPa.
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2.
We have obtained low-temperature silicon carbide from a lumped charge containing disperse silicon dioxide and gas black. The bonding agent was silica gel.
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3.
The obtained metallurgical silicon of enhanced quality with a content of boron and phosphorus at a level of 1 apm (each) can be used for the production of solar cells after plasmochemical refining.
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Translated from Metallovedenie i Termicheskaya Obrabotka Metallov, No. 6, pp. 41–44, June, 2000.
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Abdyukhanov, I.M., Abdyukhanov, M.A., Kuz'min, Y.A. et al. Production of metallurgical silicon of enhanced quality for land-based solar cells. Met Sci Heat Treat 42, 246–249 (2000). https://doi.org/10.1007/BF02471321
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DOI: https://doi.org/10.1007/BF02471321