Skip to main content
Log in

Procedure for choosing model media for melted semiconductors under terrestrial and outer-space conditions

  • Published:
Journal of Applied Mechanics and Technical Physics Aims and scope

Abstract

Based on the similarity theory, a complete set of dimensionless parameters was found, which would allow one to choose the geometry, temperature, and other conditions leading to similarity between hydrodynamic phenomena in melted semiconductors and model media. Direct calculations performed by the Oberbeck-Boussinesq system of equations validate our theoretical approach to the problem of choosing model media for various liquids and different gravity conditions.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. D. D. Joseph,Stability of Fluid Motions, Springer-Verlag, Berlin-Heidelberg (1976).

    Google Scholar 

  2. V. I. Polezhaev, A. V. Buné, N. A. Verezub, et al.,Mathematical Modeling of Convective Heat Transfer by Navier-Stokes Equations [in Russian], Nauka, Moscow (1987).

    Google Scholar 

  3. L. I. Sedov,Mechanics of Continuous Media [in Russian], Vol. 1, Nauka, Moscow (1973).

    Google Scholar 

  4. P. K. Volkov and B. G. Zakharov, “Hydrodynamics and convective heat and mass transfer under conditions of weak gravity,”Dokl. Ross. Akad. Nauk,361, No. 5, 616–619 (1988).

    Google Scholar 

  5. W. I. Haberman and R. K. Morton, “An experimental study of bubbles moving in liquids,”Proc. Amer. Soc. Civil Eng.,49, 367–387 (1954).

    Google Scholar 

  6. N. K. Ermakov, S. A. Nikitin, and V. I. Polezhaev, “System and a computer-aided laboratory for numerical convective heat and mass transfer studies,”Izv. Ross. Akad. Nauk, Mekh. Zhidk. Gaza,3, 21–38 (1977).

    Google Scholar 

  7. B. G. Zakharov, Yu. A. Ossipyan, Yu. A. Serebryakov, et al., “Peculiarities of Ge(Ga) directional solidification from thin melt layers,” in:Proc. of the Joint Xth Europ. and Russ. Symp. “Physical Sciences in Microgravity” (St. Petersburg, Russia, June 15–21, 1997), Vol. 2, Inst. for Problems in Mech., Russ. Acad. of Sci., Moscow (1977), pp. 114–118.

    Google Scholar 

  8. P. K. Volkov, S. A. Nikitin, and V. I. Polezhaev, “Modeling of processes in a melt during crystal growth by the Bridgman method with heating from above,” in: Abstracts of the 2nd Symp. “Problems in Heat and Mass Transfer and Growth of Single-Crystal and Thin-Film Structures,” (Obninsk, September 22–24, 1977), Phys. Energ. Inst., Russ. Acad. of Sci., Obninsk (1977), p. 35.

    Google Scholar 

Download references

Authors

Additional information

Research Center “Space Materials Technologies,” Institute of Crystallography, Russian Academy of Sciences, Kaluga 248033. Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 41, No. 1, pp. 210–217, January–February, 2000.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Volkov, P.K., Zakharov, B.G. Procedure for choosing model media for melted semiconductors under terrestrial and outer-space conditions. J Appl Mech Tech Phys 41, 193–199 (2000). https://doi.org/10.1007/BF02465256

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02465256

Keywords

Navigation