The structural and surface sensitivity of electron energy loss spectroscopy has been exploited to investigate the Pd-Si(lll)2 × 1 interface. We found the two MIV, V shallow edges of Pd suitable for an EELS study on the whole coverage range. EXAFSlike oscillations were detectable above the MIV, V edge for about 150 eV. These features together with the intensity ratio (MV/MIV) between the MV and MIV components showed a reproducible dependence vs. the thickness of the Pd film. From the analysis of the near edge part and the EXAFSlike oscillations a general indication of the formation of a compound very close to Pd2Si in the coverage range (5 ÷ 20) Å and the presence of a peculiar Pd-Si compound at coverages lower than 5 Å was obtained.
61.80 Radiation damage and other structure irradiation effects
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