Summary
In this work the importance of electroreflectance is evidenced in two specific applications concerning studies of semiconductor surfaces: i) determination of junction depths and carrier profiles, ii) mapping of inhomogeneity curves of the carrier distribution on Si surfaces. New information in both cases is obtained and briefly discussed.
Riassunto
In questo lavoro si mette in evidenza l'importanza dell'elettroriflettanza in due applicazioni specifiche riguardanti studi di superfici di semiconduttori: i) determinazione di profondità di giunzione e profili della densità dei portatori, ii) mappa di curve di disomogeneità nella distribuzione dei portatori su superfici di silicio. I nuovi dati ottenuti in entrambi i casi sono riportati e brevemente discussi.
Резюме
В этой работе подтверждается важность электроотржениь при исследовании поверхностей полупроводников. Отмечаются два приложения: 1) определение глубин переходов и профилей носителей, 2) отображение кривых неоднородностей для распределения носитеяей на поверхностях кремния. В обонх случаях получается новая информацня, которая кратко обсуждается.
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Work partially supported by Progetto Finalizzato Energetica (Sottoprogetto Energia Solare) of consiglio Nazionale delle Ricerche.
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Geddo, G., Maghini, D. & Stella, A. Investigation of doping in Si crystals by means of electroreflectance. Il Nuovo Cimento D 2, 1526–1540 (1983). https://doi.org/10.1007/BF02460230
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DOI: https://doi.org/10.1007/BF02460230