Il Nuovo Cimento D

, Volume 2, Issue 6, pp 1869–1874 | Cite as

Growth of Pb1−x Mn x Te thin films by hot-wall epitaxy

  • G. Elsinger
  • L. Palmetshofer
  • A. Lopez-Otero
Article

Summary

Thin epitaxial films ((0.5÷5) μm) of Pb1−x Mn x Te (0≤x≤0.03) have been grown on BaF2 substrates by a modified hotwall technique. The evaporation system has three independent sources containing PbTe, Mn and Te, respectively. Bothn- andp-type films with carrier concentrations in the range (2÷10)·1017 cm−3 and with mobilities up to 105 cm2/V s have been prepared.

PACS. 68.55

Thin-film growth, structure and epitaxy 

Riassunto

Strati epitassiali sottili ((0.5÷5) μm) di Pb1−x Mn x Te (0≤x≤0.03) sono stati accresciuti su substrati di BaF2 con una tecnica modificata di riscaldamento della parete. Il sistema di evaporazione ha tre sorgenti indipendenti che contengono PbTe, Mn e Te, rispettivamente. Sono stati preparati sia film di tipon che di tipop con concentrazione di portatori nell'intervallo (2÷10)·1017 cm−3 e con mobilità fino a 105 cm2/V s.

Резюме

Тонкие эпитаксиальные пленки ((0.5÷5) мкм) Pb1−x Mn x Te (0≤x≤0.03) выращиваются на подложках BaF2 с помощйю модифицированного метода »горячей стенки». Испарителяная система имеет три независимых источника, содержаших соответственно PbTe, Mn и Te. Приготовляются тонкие пленкиnp-типов с концентрациями носителей в области (2÷10)·1017 см−3 и с подвижностями вплоть до 105 см2/Вс.

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Literatur

  1. (1).
    J. Niewodniczanska-Zawadzka andA. Szczerbakow:Solid State Commun.,34, 887 (1980).CrossRefGoogle Scholar
  2. (2).
    L. Palmetshofer, B. Wakolbinger andE. Zinner:Proceedings of the International Conference on Ion Beam Modification of Materials, Grenoble (1982).Google Scholar
  3. (3).
    A. Lopez-Otero:Thin Solid Films,49, 3 (1978).CrossRefGoogle Scholar
  4. (4).
    M. N. Vinogradova, N. V. Kolomoets, andL. M. Sysoeva:Sov. Phys. Semicond.,5, 186 (1971).Google Scholar
  5. (5).
    J. van den Boomgaard:Philips Res. Rep.,24, 284 (1969).Google Scholar
  6. (6).
    V. G. Vanyarkho, V. P. Zlomanov andA. V. Novoselova:Inorg. Mater. (Engl. Transl.),6, 1352 (1970).Google Scholar
  7. (7).
    J. Niewodniczanska-Zawadzka, G. Elsinger, L. Palmetshofer, A. Lopez-Otero, E. J. Fantner, G. Bauer andW. Zawadzki:Proceedings of the XVI International Conference on the Physics of Semiconductors, Montpellier (1982).Google Scholar

Copyright information

© Società Italiana di Fisica 1983

Authors and Affiliations

  • G. Elsinger
    • 1
  • L. Palmetshofer
    • 1
  • A. Lopez-Otero
    • 1
  1. 1.Institut für ExperimentalphysikUniversität LinzLinzAustria

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