Summary
Electrical data from sputtered and annealedp-type CuInS2 thin films have been obtained over a range of temperatures. An analysis of hole mobilityvs. temperature data indicates that the charge carriers are predominantly scattered by neutral and ionized impurities and by acoustic-mode vibrations.
Riassunto
Si sono ottenuti dati elettrici da sottili film di CuInS2 del tipop temprati e anodizzati su un vasto intervallo di temperature. Un'analisi dei dati della mobilità della buca rispetto alla temperatura indica che i portatori di carica sono prevalentemente diffusi da impurità neutre e ionizzate e da vibrazioni del modo acustico.
Резюме
Получаются злектрические данные для напыленных и отожженных тонких пленок CuInS2 p-типа. Анализ зависимости подвижности дырок от температуры указывает, что носители зарядов преимущественно рассеиваются на нейтральных и ионизованных примесях и на акустических колебаниях.
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Samaan, A.N.Y., Al-Saffar, I.S., Wasim, S.M. et al. Some characteristics of r.f. sputtered CuInS2 thin films. Il Nuovo Cimento D 2, 1748–1753 (1983). https://doi.org/10.1007/BF02457861
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DOI: https://doi.org/10.1007/BF02457861