Skip to main content
SpringerLink
Log in

Preparation and characterization of the LiInSe2 thin films

  • Published:
Il Nuovo Cimento D

Summary

p-type LiInSe2 films have been prepared by the rapid evaporation method onn-type Si andn-type GaP. Various characterization techniques such as the X-ray analysis, the Rutherford backscattering (RBS) analysis and the scanning electron microscopy were used to evaluated the quality of the films. The rectifications of the preliminary heterojunctions are demonstrated.

Riassunto

Sono stati preparati film di LiInSe2 di tipop con il metodo di evaporazione rapida su Si di tipon e GaP di tipon. Sono state usate varie tecniche di caratterizzazione come l'analisi con raggi X, l'analisi dello scattering all'indietro di Rutherford (RBS) e la microscopia elettronica di scansione per valutare la qualità dei film. Si dimostrano le rettificazioni delle eterogiunzioni preliminari.

Резюме

Приготовляются пленки LiInSe2 p-типа методом быстрого испарения на Sin-типа и GaPp-типа. Для оценки качества плчества пленок используются различные методики: рассеяние рентгеновских лучей, обратное резерфордовское рассеяние, сканирующая электронная микроскопия. Демонстрируется выпрямяюшее действие гетеропереходов.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Literatur

  1. T. Kamijoh, T. Nozaki andK. Kuriyama:J. Appl. Phys.,53, 761 (1982).

    Article  ADS  Google Scholar 

  2. T. Kamijoh andK. Kuriyama:J. Appl. Phys.,52, 1102 (1981).

    Article  ADS  Google Scholar 

  3. T. Kamijoh andK. Kuriyama:J. Cryst. Growth,51, 6 (1981).

    Article  Google Scholar 

  4. W. K. Chu, J. W. Mayer andM. A. Nicolet:Backscattering Spectrometry (New York, N. Y., 1978).

  5. R. Baron andJ. W. Mayer:Semiconductors and Semimetals, Vol.6, edited byR. K. Williardson andA. C. Beer (New York, N. Y., 1970).

  6. J. I. Pankove:Opitical Processes in Semiconductors (Englewood Cliffs, N. J., 1971). Chapt. 8.

Download references

Author information

Author notes

  1. T. Kamijoh

    Present address: Research Laboratory, OKI Electric Industry Co., LTD, Hachioji, 193, Tokyo, Japan

Authors and Affiliations

  1. College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, 184, Tokyo, Japan

    K. Kuriyama, A. Matsubara, T. Nozaki & T. Kamijoh

Authors
  1. K. Kuriyama
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Matsubara
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. Nozaki
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. T. Kamijoh
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kuriyama, K., Matsubara, A., Nozaki, T. et al. Preparation and characterization of the LiInSe2 thin films. Il Nuovo Cimento D 2, 1723–1727 (1983). https://doi.org/10.1007/BF02457857

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02457857

PACS. 81.15

Search

Navigation