Il Nuovo Cimento D

, Volume 18, Issue 7, pp 885–888 | Cite as

Neutral impurity scattering in semiconductors

  • B. Alkan
Note Brevi
  • 141 Downloads

Summary

Applying the correlation function technique, a temperature-independent mobility μn has been obtained and it is shown that this μn remains close to the experimental mobility ofn-type Ge around 10 K.

PACS 72.10.Fk

Scattering by point defects, dislocation, surfaces, and other imperfections (including Kondo effect) 

PACS 72.10.Bg

General formulation of transport theory 

PACS 72.20.Fr

Low-field transport and mobility piezoresistance 

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Copyright information

© Società Italiana di Fisica 1996

Authors and Affiliations

  • B. Alkan
    • 1
  1. 1.Department of Engineering Physics, Faculty of SciencesUniversity of AnkaraAnkaraTurkey

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