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Il Nuovo Cimento D

, Volume 17, Issue 11–12, pp 1585–1593 | Cite as

Exciton recombination mechanism and binding energies in MOCVD-grown Zn1−x Cd x Se−ZnSe single quantum wells

  • F. Liaci
  • L. Aigouy
  • P. Bigenwald
  • B. Gil
  • N. Briot
  • T. Cloitre
  • O. Briot
  • R. -L. Aulombard
Article
  • 26 Downloads

Summary

We report here on the study of the optical properties of ZnCdSe−ZnSe quantum structures elaborated by metalorganic chemical vapour deposition (MOCVD). The band structure is experimentally investigated by means of photoluminescence and photoreflectance. We have computed the exciton binding energies for heavy- and light-hole excitons in the context of a self-consistent two-parameter trial function. As a complement, we study the temperature dependence of the photoluminescence intensity under both direct and indirect photoexcitation in graded-index separate confinement heterostructures based on these materials.

PACS 71.35

Excitons and related phenomena (including electron-hole drops) 

PACS 78.66

Optical properties of thin films surfaces and layer structures (superlattices, heterojunctions and multilayers) 

PACS 01.30.Cc

Conference proceedings 

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References

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Copyright information

© Società Italiana di Fisica 1995

Authors and Affiliations

  • F. Liaci
    • 1
  • L. Aigouy
    • 1
  • P. Bigenwald
    • 1
  • B. Gil
    • 1
  • N. Briot
    • 1
  • T. Cloitre
    • 1
  • O. Briot
    • 1
  • R. -L. Aulombard
    • 1
  1. 1.Groupe d'Etude des SemiconducteursUniversité de Montpellier IIMontpellier Cedex 5France

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