Summary
Optical properties of GaAs/Al x Ga1−x As shallow quantum wells have been studied in the 2–200K range, both by c.w. and time-resolved experiments. The results agree with a variational calculation of the excitonic transitions. The LO-phonon-assisted carrier relaxation and a temperature-activated non-radiative channel are evidence.
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Heller, O., Tignon, J., Martinez-Pastor, J. et al. Exciton states and relaxation dynamics in shallow quantum wells. Il Nuovo Cimento D 17, 1493–1498 (1995). https://doi.org/10.1007/BF02457232
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DOI: https://doi.org/10.1007/BF02457232