Il Nuovo Cimento D

, Volume 17, Issue 11–12, pp 1465–1471 | Cite as

Magnetism as a probe for wave function localization in GaSb/AlGaSb quantum wells

  • P. V. Giugno
  • A. L. Convertino
  • R. Rinaldi
  • R. Cingolani
  • J. Massies
  • M. Leroux
Article
  • 18 Downloads

Summary

The localization of the wave function on the scale length of a single monolayer has been studied by magnetophotoluminescence in GaSb/AlGaSb quantum wells. The studied range of well width includes the direct-indirect transition involvingL-point conduction states and Γ-point valence states induced by quantum size effects. Separate carrier localization dominates at higher field values (B>2T), whereas the excitonic effects are important only in the low field range. Variational calculations of the excitonic transverse extension provide a quantitative description of the experimental data. The dependence of the effective reduced mass on the well width has been obtained experimentally by magnetoluminescence that is highly sensitive to the modifications of the wave function, even on the scale of a single monolayer.

PACS 73.20

Surface and interface electron states 

PACS 71.35

Excitons and related phenomena (including electron-hole drops) 

PACS 01.30.Cc

Conference proceedings 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    For a review of the GaSb/AlxGa1−xSb physical properties and device applications:Milnes A. G. andPolyakov A. Y.,Solid-State Electron.,36 (1993) 803;Xie H. andWang W. I.,Appl. Phys. Lett.,63 (1993) 776.CrossRefGoogle Scholar
  2. [2]
    Giugno P. V., Convertino A. L., Rinaldi R., Cingolani R., Massies J. andLeroux M.,Phys. Rev. B,52 (1995) 11591.CrossRefADSGoogle Scholar
  3. [3]
    Miyazawa T., Tarucha S., Ohmori Y., Suzuki Y. andOkamoto H.,Jpn. J. Appl. Phys.,25 (1986) L220.CrossRefGoogle Scholar
  4. [4]
    Leroux M. andMassies J., to be published byAppl. Phys. Lett. (1995).Google Scholar
  5. [5]
    Ossau W., Jäkel B., Bangert E., Landwehr G. andWeimann G.,Surf. Sci.,174 (1986) 188.CrossRefGoogle Scholar
  6. [6]
    Nash K. J., Skolnick M. S., Claxton P. A. andRoberts J. S.,Phys. Rev. B,39 (1989) 10943.CrossRefADSGoogle Scholar
  7. [7]
    Cebulla U., Tränkle G., Ziem U., Forchel A., Griffiths G., Kroemer H. andSubbanna S.,Phys. Rev. B,37 (1988) 6278.CrossRefADSGoogle Scholar

Copyright information

© Società Italiana di Fisica 1995

Authors and Affiliations

  • P. V. Giugno
    • 1
  • A. L. Convertino
    • 1
  • R. Rinaldi
    • 1
  • R. Cingolani
    • 1
  • J. Massies
    • 2
  • M. Leroux
    • 2
  1. 1.Dipartimento di Scienza dei MaterialiUniversità di LecceLecceItaly
  2. 2.Centre de Recherche sur l'Hetero-Epitaxie et ses Applications Sophia AntipolisCNRSValbonneFrance

Personalised recommendations