Summary
Surface melting is strongly influenced by the interaction between the solid-liquid interface and the liquid-vapour interface. Unretarded electromagnetic dispersion forces yield a potential of the formH/l 2, wherel is the distance between the interfaces (thickness of the quasi-liquid film) andH is the appropriate Hamaker constant. We have adopted the well-known treatment of dispersion forces of Lifshitzet al., where the frequency-dependent conductivities of solid and liquid are the primary quantities for the calculation of this Hamaker constant. Using the dielectric functions obtained from experimental data, numerical values forH are obtained for Al, Pb, Au, Bi and Ge. The Hamaker constant of the metals is found to be positive and is discussed in connection with recent experimental data on surface melting, particularly of Pb(110) and Al(110). The Hamaker constants of Bi (semimetal) and Ge (semiconductor) are negative, allowing at most blocked surface melting.
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Chen, X.J., Levi, A.C. & Tosatti, E. Hamaker-constant calculations and surface melting of metals, semimetals and semiconductors. Il Nuovo Cimento D 13, 919–937 (1991). https://doi.org/10.1007/BF02457179
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DOI: https://doi.org/10.1007/BF02457179