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The density of states in the mobility gap ofa-Si1−x Ge x films

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Il Nuovo Cimento D

Summary

The density of states distribution (DOS) in the mobility gap of undoped glow-dischargea-Si1-x Ge x : H alloy films was determined by means of field effect tecnique. The specimens were grown at different percentages of Ge. The DOS of the films shows a behaviour related to the content of germanium and it is independent of the presence of additional hydrogen in discharge.

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Authors and Affiliations

  1. Dipartimento di Matematica e Fisica, Università di Camerino, Gruppo Nazionale di Struttura della Materia, Via Madonna del Carcere, 62032, Camerino, Italia

    F. Gozzo, R. Murri, N. Pinto & L. Schiavulli

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  1. F. Gozzo
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  2. R. Murri
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  3. N. Pinto
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  4. L. Schiavulli
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Gozzo, F., Murri, R., Pinto, N. et al. The density of states in the mobility gap ofa-Si1−x Ge x films. Il Nuovo Cimento D 13, 273–280 (1991). https://doi.org/10.1007/BF02456955

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  • DOI: https://doi.org/10.1007/BF02456955

PACS 71.20

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