Russian Physics Journal

, Volume 39, Issue 5, pp 425–429 | Cite as

Model for the axial growth of filamentary silicon crystals

  • V. A. Nebol'sin
  • A. A. Shchetinin
  • B. M. Darinskii
  • E. E. Popova
Physics of Semiconductors and Dielectrics
  • 11 Downloads

Abstract

We propose a model for the axial growth of filamentary silicon crystals, based on the assumption that the crystallization occurs in a diffusion-limited regime. A kinetic equation is obtained which enables us to analyze changes in the crystal growth rate under the influence of various technological parameters.

Keywords

Silicon Atom Liquid Drop SiCl Axial Growth Crystal Growth Rate 

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Copyright information

© Plenum Publishing Corporation 1996

Authors and Affiliations

  • V. A. Nebol'sin
  • A. A. Shchetinin
  • B. M. Darinskii
  • E. E. Popova

There are no affiliations available

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