Kinetics and edge-growth effects of GaAs LPE layers grown in the Ga-As-Bi system
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Studies of the growth kinetics of GaAs epitaxial layers obtained from Ga-As and Ga-As-Bi solutions are compared in this work. We applied an equilibrium cooling method in a classic liquid phase epitaxy (LPE) system with the use of slider-type boats. The studies were carried out for Ga-As-Bi solutions containing 0 to 95% wt % Bi and also for Ga-As solutions at the same technological parameters of the growth process for comparison purposes. It is shown that in the applied range of bismuth concentration in the alloys, the GaAs growth rate is 0.5 to 3 times higher than for classic Ga-As solutions. It is found that the presence of bismuth in the solutions eliminates a disadvantageous GaAs edge-growth on the layer edges and considerably decreases the number of meniscus lines on the deposited layer surface.
KeywordsPolymer Growth Rate Layer Surface GaAs Bismuth
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