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Journal of Materials Science

, Volume 21, Issue 11, pp 3829–3835 | Cite as

Some electrical properties of co-evaporated GeO-BaO thin films

  • M. Y. Nadeem
  • C. A. Hogarth
Papers

Abstract

The direct-current electrical conduction both before and after the electroforming process is investigated in thin layers of GeO2 co-evaporated with BaO and sandwiched between various metallic electrodes. The mobility associated with the conduction at low temperature (hopping) is evaluated. Electroformed devices show voltage-controlled negative resistance and electron emission. The effect of the nature of the metallic electrodes and that of the dielectric thickness on these electrical properties is reported.

Keywords

Polymer Thin Film Electrical Conduction Thin Layer Electrical Property 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    W. Schottky,Phys. Z. 15 (1914) 872.Google Scholar
  2. 2.
    N. F. Mott,Phil. Mag 24 (1971) 911.Google Scholar
  3. 3.
    N. F. Mott andE. A. Davis, “Electronic Processes in Non-crystalline Materials” (Clarendon Press, Oxford, 1971) p. 39.Google Scholar
  4. 4.
    K. W. Böer,J. Non-Cryst. Solids 4 (1970) 583.CrossRefGoogle Scholar
  5. 5.
    G. S. Kreynina, L. N. Selivanov andT. I. Shumskaia,Radio Engng. Elect. 5 (1960) 219.Google Scholar
  6. 6.
    R. D. Gould andC. A. Hogarth,Int. J. Elect. 37 (1974) 157.Google Scholar
  7. 7.
    J. G. Simmons andR. R. Verderber,Proc. R. Soc. A301 (1967) 77.Google Scholar
  8. 8.
    P. D. Greene, E. L. Bush andI. R. Rawlings, in Proceedings of Symposium on Deposited Thin Film Dielectric Materials, New York, 1968, edited by F. Vratny (The Electrochemical Society, New York, 1969) p. 167.Google Scholar
  9. 9.
    K. H. Gundlach andJ. Kadlec,Phys. Status Solidi (a) 10 (1972) 371.Google Scholar
  10. 10.
    R. R. Sutherland,J. Phys. D 4 (1971) 468.CrossRefGoogle Scholar
  11. 11.
    C. A. Hogarth andL. A. Wright, in Proceedings of International Conference on Physics of Semiconductors, Moscow, 1968 (Academy of Sciences, Leningrad, 1968) p. 1274.Google Scholar
  12. 12.
    M. Y. Nadeem andC. A. Hogarth,Phys. Status Solidi (a) 72 (1982) K 203.Google Scholar
  13. 13.
    T. W. Hickmott,J. Appl. Phys. 35 (1964) 2118.CrossRefGoogle Scholar
  14. 14.
    Idem, ibid. 35 (1964) 2679.CrossRefGoogle Scholar

Copyright information

© Chapman and Hall Ltd. 1986

Authors and Affiliations

  • M. Y. Nadeem
    • 1
  • C. A. Hogarth
    • 1
  1. 1.Department of PhysicsBrunel UniversityUxbridgeUK

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