Atomic Energy

, Volume 77, Issue 3, pp 703–706 | Cite as

Performance degradation of Si(Li) detectors with a working area of 20–60 cm2

  • R. A. Muminov
  • S. R. Radzhabov
  • D. K. Khasanov
Scientific And Technical Reports


Performance Degradation 
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    K. V. Ravi, Defects and Impurities in Semiconductor Silicon [Russian translation], Mir, Moscow (1984).Google Scholar
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    V. D. Afanas'eva, N. P. Afanas'eva, and B. G. Lyubchik, "Effect of a nonuniformity of acceptor distribution on compensation in lithium-drift p-i-n junctions," Fiz. Tekh. Poluprovodn.,8, 1090–1095 (1974).Google Scholar
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    B. G. Lyubchik, "Contribution to the theory of compensation of semiconductors by the method of lithium ion drift in the presence of sharp local nonuniformities of the acceptor distribution," Fiz. Tekh. Poluprovodn.,9, 1039–1040 (1975).Google Scholar
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    B. B. Baizakov and S. A. Radzhabov, "Optimization of the process of ‘equalizing’ drift in Si(Li) detectors," in: Abstracts of Reports at the 38th Conference on Nuclear Spectroscopy and Nuclear Structure [in Russian], Nauka, Leningrad (1988), p. 580.Google Scholar

Copyright information

© Plenum Publishing Corporation 1995

Authors and Affiliations

  • R. A. Muminov
  • S. R. Radzhabov
  • D. K. Khasanov

There are no affiliations available

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