R.M. Swanson and J.D. Meindl, “Ion-implanted complementary MOS transistors in low-voltage circuits,”IEEE J. Solid-State Circuits, Vol. SC-7, No. 2, pp. 146–173, 1972.
E.A. Vittoz, “Micropower techniques,” inVLSI Circuits for Telecommunications (Y.P. Tsividis and P. Antognetti, eds.), Prentice Hall: Englewood Cliffs, NJ, 1985.
E.A. Vittoz and J. Fellrath, “CMOS analog integrated circuits based on weak inversion operation,”IEEE J. Solid-State Circuits, Vol. SC-12, No. 3, pp. 224–231, 1977.
E.A. Vittoz, “The design of high-performance analog circuits on digital CMOS chips,”IEEE J. Solid-State Circuits, Vol. SC-20, No. 3, pp. 657–665, 1985.
J. Burr and A. Peterson, “Ultra low power CMOS technology,”Proc. 3rd NASA Symp. VLSI Design, Boise, ID, 1991.
C.A. Mead,Analog VLSI and Neural Systems, Addison-Wesley: Reading, MA, 1989.
E.A. Vittoz, “Future of analog in the VLSI environment,”Proc. 1990 Int. Symp. Circuits and Systems, pp. 1372–1375, New Orleans, 1990.
A.G. Andreou and K.A. Boahen, “Neural Information Processing II,” inAnalog VLSI: Signal and Information Processing (M. Ismail and T. Fiez, eds.), McGraw-Hill: New York, 1994.
R.W. Keyes, “Physical limits in digital electronics,”Proc. IEEE, Vol. 63, No. 5, pp. 740–767, 1975.
R.W. Keyes,The Physics of VLSI Systems, Addison-Wesley: Wokingham, England, 1987.
C.A. Mead and L. Conway,Introduction to VLSI Systems, Addison-Wesley: Reading, MA, 1981.
J.B. Shyu, G.C. Temes, and K. Yao, “Random errors in MOS capacitors,”IEEE J. Solid-State Circuits, Vol. SC-17, No. 6, 1982.
M.J. Pelgrom, A.C.J. Kuinmaijer, and A.P.G. Welbers, “Matching properties of MOS transistors,”IEEE J. Solid-State Circuits, Vol. SC-24, No. 5, 1989.
J.B. Shyu, G.C. Temes, and F. Krummenacher, “Random error effects in matched MOS capacitors and current sources,”IEEE J. Solid-State Circuits, Vol. SC-19, No. 6, 1984.
K.R. Lakshmukumar, R.A. Hadaway, and M.A. Copeland, “Characterization and modeling of mismatch in MOS transistors for precision analog design,”IEEE J. Solid-State Circuits, Vol. SC-21, No. 6, 1986.
K.A. Boahen and A.G. Andreou, “A contrast sensitive silicon retina with reciprocal synapses,” inAdvances in Neural Information Processing Systems 4 (J.E. Moody, S.J. Hanson, and R.P. Lippmann, eds.), Morgan Kaufmann: San Mateo, CA, 1992.
M.G. Buehler, B.R. Blaes, H.R. Sayah, and U. Lieneweg, “Parameter distributions for complex VLSI circuits,”Proc. Decennial Caltech Conf. VLSI, MIT Press, 1989.
M. Godfrey, “CMOS device modeling for subthreshold circuits,”IEEE Trans. Circuits Systems II, Vol. 39, No. 8, 1992.
A. Pavasović, A.G. Andreou, and C.R. Westgate, “Characterization of CMOS process variations by measuring subthreshold current,”Non-Destructive Characterization of Materials, Vol. IV (C.O. Ruud and R.E. Green, eds.), Plenum Press: New York, 1991.
A. Pavasović,Subthreshold Region MOSFET Mismatch Analysis and Modeling for Analog VLSI Systems, Ph.D. dissertation, The Johns Hopkins University, Baltimore, 1991.
S. Wolfram,Mathematica, A System for Doing Mathematics by Computer, Addison-Wesley: Reading, MA, 1988.
J. Tanner,Integrated Optical Motion Detection, Ph.D. dissertation, California Institute of Technology, 1986.
C.A. Mead, Personal communication.
G.J. Hahn and S.S. Shapiro,Statistical Models in Engineering, Wiley: New York, 1967.
J. Rijmenants, J.B. Litsios, T.R. Schwarz, and M.G.R. Degrauwe, “ILAC: an automated layout tool for analog CMOS circuits,”IEEE J. Solid-State Circuits, Vol. SC-24, No. 2, 1989.
Y. Tsividis, “Problems with precision modeling of analog MOS LSI,”Proc. IEEE Int. Electron Devices Meeting, San Francisco, pp. 274–277, 1982.
A.G. Andreou, “In-situ characterization of carrier mobility in field effect transistors,” inReview of Progress in Quantitative Nondestructive Evaluation 8B (D.O. Thompson and D.E. Chimenti, eds.), Plenum Press: New York, pp. 1247–1254, 1989.
K. Yang, R.C. Meitzler, A.G. Andreou, “A model for MOS effective channel mobility with emphasis in the subthreshold and transition region,”Proceedings IEEE ISCAS-94, London, June 1994.
J.T.C. Chen and R.S. Muller, “Carrier mobilities at weakly inverted silicon surfaces,”J. Appl. Phy., Vol. 45, No. 2, 1974.